ICP等离子体刻蚀束刻蚀

Etched Material

PZT¹

Pt¹

Al²,³

AlN

Gas chemistry

Ar-CHF₃-(Cl₂)

Ar-Cl₂

BCl₃-Cl₂

BCl₃-Cl₂-Ar

Etch Depth / μm

≤ 2.0

≤ 0.2

≤ 2.0

≤ 2.0

Etch rate / nm/min

>100

>100

>200

>150

Mask type

PR

PR

PR

PR

Selectivity

>0.7:1(PR)

>10:1 (Pt)

>0.5:1 (PR)

2:1 (PR)

>0.7:1 (PR)

>0.5 to 2:1 (Mo)⁴

Profile / °

>70

>70

>88

>70

Uniformity (within wafer)

<±5%

<±5%

<±5%

<±5%

Run-to-run

<±3%

<±3%

<±3%

<±3%